GaN-Based Zero Voltage Switching (ZVS)
Up to 96% Efficiency
By replacing traditional silicon MOSFETs with Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs), our USB-PD power converters operate at switching frequencies up to 500 kHz with negligible turn-on losses.
- Active Clamp Flyback (ACF) and LLC resonant converters eliminate hard switching losses across variable VBUS steps (5V to 48V)
- Planar transformers integrated directly into 8-layer PCBs reduce parasitic leakage inductance and acoustic noise
- Drastic footprint reduction allowing multi-port 140W/240W power supplies to fit in compact embedded enclosures